Consequences of anion vacancy nearest-neighbor hopping in III-V compound semiconductors: Drift in InP metal-insulator-semiconductor field-effect transistors
- J.A. Van Vechten
- J.F. Wager
- 1985
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
Characterization of silicon implanted GaAs buffer layers grown by metalorganic chemical vapor deposition
- T.F. Kuech
- R.M. Potemski
- et al.
- 1985
- Journal of Applied Physics
PaperNumerical results for the random field Ising model (invited)
- E. Pytte
- J.F. Fernandez
- 1985
- Journal of Applied Physics
PaperFormation of Pt silicides: The effect of oxygen
- Chin-An Chang
- 1985
- Journal of Applied Physics
PaperThermal characteristics of matrix-addressed liquid-crystal display
- M.H. Lee
- S.W. Depp
- et al.
- 1985
- Journal of Applied Physics
PaperGeneration of positive charge in silicon dioxide during avalanche and tunnel electron injection
- Massimo V. Fischetti
- 1985
- Journal of Applied Physics
PaperMagneto-optic properties of Nd-Fe-Co amorphous alloys
- R.J. Gambino
- T.R. McGuire
- 1985
- Journal of Applied Physics
PaperLaser ablation of organic polymers: Microscopic models for photochemical and thermal processes
- Barbara J. Garrison
- R. Srinivasan
- 1985
- Journal of Applied Physics
PaperMicroloop measurements of recording head fields versus current
- Roger F. Hoyt
- 1985
- Journal of Applied Physics
PaperRelationship between beam and junction parameters in ion beam processed Josephson devices
- A.W. Kleinsasser
- 1985
- Journal of Applied Physics
Paper