Oxygen removal from Si via reaction with adsorbed Ge
- J.F. Morar
- B.S. Meyerson
- et al.
- 1987
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Rapid annealing and the anomalous diffusion of ion implanted boron into silicon
- Alwin E. Michel
- W. Rausch
- et al.
- 1987
- Applied Physics Letters
PaperStudies of texture in thin films using synchrotron radiation and energy dispersive diffraction
- M. Hart
- W. Parrish
- et al.
- 1987
- Applied Physics Letters
PaperOptically detected electron cyclotron resonance in silicon
- E.J. Pakulis
- G. Northrop
- 1987
- Applied Physics Letters
PaperScanning tunneling microscopy and potentiometry on a semiconductor heterojunction
- P. Muralt
- H.P. Meier
- et al.
- 1987
- Applied Physics Letters
PaperOrigin of the band-edge states in [001] thin superlattices of GaAs/AlAs
- J.S. Nelson
- C.Y. Fong
- et al.
- 1987
- Applied Physics Letters
PaperLaser energy deposition at sapphire surfaces studied by pulsed photothermal deformation
- R.W. Dreyfus
- F.Alan McDonald
- et al.
- 1987
- Applied Physics Letters
PaperElectrical activation of arsenic ion-implanted polycrystalline silicon by rapid thermal annealing
- C.Y. Wong
- Y. Komem
- et al.
- 1987
- Applied Physics Letters
PaperQuantum interference devices made from superconducting oxide thin films
- R.H. Koch
- C.P. Umbach
- et al.
- 1987
- Applied Physics Letters
PaperNoncontact measurement of thermal conductivity of epoxy bonds by pulsed photothermal radiometry
- W.P. Leung
- A.C. Tam
- 1987
- Applied Physics Letters
Paper