Inhomogeneous lattice distortion in the heteroepitaxy of InAs on GaAs
- H. Munekata
- Armin Segmüller
- et al.
- 1987
- Applied Physics Letters
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2344 results at Applied Physics Letters
Carrier lifetime versus ion-implantation dose in silicon on sapphire
- F.E. Doany
- D. Grischkowsky
- et al.
- 1987
- Applied Physics Letters
Origin of the band-edge states in [001] thin superlattices of GaAs/AlAs
- J.S. Nelson
- C.Y. Fong
- et al.
- 1987
- Applied Physics Letters
Laser energy deposition at sapphire surfaces studied by pulsed photothermal deformation
- R.W. Dreyfus
- F.Alan McDonald
- et al.
- 1987
- Applied Physics Letters
Rapid thermal diffusion and ohmic contacts using zinc in GaAs and GaAlAs
- Sandip Tiwari
- Jeffrey Hintzman
- et al.
- 1987
- Applied Physics Letters
Nonlocal electrical properties in mesoscopic devices
- C.P. Umbach
- P. Santhanam
- et al.
- 1987
- Applied Physics Letters
Phase transformation kinetics - The role of laser power and pulse width in the phase change cycling of Te alloys
- K.A. Rubin
- Roger Barton
- et al.
- 1987
- Applied Physics Letters
Selectively enhanced silicide formation by a gold interlayer: Probing the dominant diffusing species and reaction mechanisms during thin-film reactions
- Chin-An Chang
- Jerng-Sik Song
- 1987
- Applied Physics Letters
Stable photoinduced paramagnetic defects in hydrogenated amorphous silicon nitride
- David T. Krick
- P. Lenahan
- et al.
- 1987
- Applied Physics Letters
Characterization of reactively sputtered ruthenium dioxide for very large scale integrated metallization
- L. Krusin-Elbaum
- M. Wittmer
- et al.
- 1987
- Applied Physics Letters