The Design and Electrical Characteristics of High-Performance Single-Poly Ion-Implanted Bipolar Transistors
- Denny Duan-Lee Tang
- Tze-Chiang Chen
- et al.
- 1989
- IEEE T-ED
Paper
Publications
465 results at IEEE T-ED
Analysis of the Operation of GaAlAs/GaAs HBT's
- Sandip Tiwari
- David J. Frank
- 1989
- IEEE T-ED
PaperIIB-1 Analysis of Picosecond and Subpicosecond MSM Photodiodes with Very Low Bias Voltage
- B.J. Van Zeghbroeck
- 1988
- IEEE T-ED
PaperIVA-3 Surface Recombination in GaAlAs/GaAs Heterostructure Bipolar Transistors
- Sandip Tiwari
- David J. Frank
- et al.
- 1988
- IEEE T-ED
PaperAn Advanced Bipolar Transistor with Self-Aligned Ion-Implanted Base and W/Poly Emitter
- Tze-Chiang Chen
- Suryadever Basvaiah
- et al.
- 1988
- IEEE T-ED
PaperIdentification and Implication of a Perimeter Tunneling Current Component in Advanced Self-Aligned Bipolar Transistors
- Hackbarth LI, Edward
- Tze Chiang Chen
- 1988
- IEEE T-ED
PaperThe Effect of Extrinsic Base Encroachment on the Switch-On Transient of Advanced Narrow-Emitter Bipolar Transistors
- C.T. Chuang
- 1988
- IEEE T-ED
PaperJunction Degradation in Bipolar Transistors and the Reliability Imposed Constraints to Scaling and Design
- Denny Duan-Lee Tang
- Edward Hackbarth
- 1988
- IEEE T-ED
PaperWaveform Measurements in High-Speed Silicon Bipolar Circuits Using a Picosecond Photoelectron Scanning Electron Microscope
- Paul May
- Jean-Marc Halbout
- et al.
- 1988
- IEEE T-ED
PaperDevelopment and Experimental Verification of a Two-Dimensional Numerical Model of Piezoelectrically Induced Threshold Voltage Shifts in GaAs MESFET’s
- Jean-Claude Ramirez
- Patrick J. Mcnally
- et al.
- 1988
- IEEE T-ED
Paper