High-Performance Emitter-Up/Down SiGe HBT's
- Joachim N. Burghartz
- Keith A. Jenkins
- et al.
- 1994
- IEEE Electron Device Letters
Paper
Publications
307 results at IEEE Electron Device Letters
Transistor Performance and Electron Transport Properties of High Performance InAs Quantum-Well FET's
- John K. Zahurak
- Stephen A. Rishton
- et al.
- 1994
- IEEE Electron Device Letters
PaperAn Epitaxial Emitter-Cap SiGe-Base Bipolar Technology Optimized for Liquid-Nitrogen Temperature Operation
- John D. Cressler
- Emmanuel F. Crabbé
- et al.
- 1994
- IEEE Electron Device Letters
PaperOn the Effects of Hydrogen in p-n-p Transistors under Forward Current Stress in a C-BiCMOS Technology
- J.Y.C. Sun
- Maw-Rong Chin
- 1993
- IEEE Electron Device Letters
PaperReliability Imposed Design Aspects of Submicrometer Polysilicon-Emitter Bipolar Transistors
- Joachim N. Burghartz
- Yuh-Jier Mii
- 1993
- IEEE Electron Device Letters
PaperA Model for Anomalous Short-Channel Behavior in Submicron MOSFET’s
- H.I. Hanafi
- Y. Lii
- et al.
- 1993
- IEEE Electron Device Letters
PaperCurrent Gain Rolloff in Graded-Base SiGe Heterojunction Bipolar Transistors
- Emmanuel F. Crabbé
- John D. Cressler
- et al.
- 1993
- IEEE Electron Device Letters
PaperGate current injection in MOSFET's with a split-gate (virtual drain) structure
- H.-S. Wong
- 1993
- IEEE Electron Device Letters
PaperHigh-Performance Si/SiGe n-Type Modulation-Doped Transistors
- Khaled Ismail
- S. Rishton
- et al.
- 1993
- IEEE Electron Device Letters
PaperAnomalous Voltage Overshoot During Turn-Off of Thin-Film n-Channel SOI MOSFET's
- E. Dubois
- Ghavam G. Shahidi
- et al.
- 1993
- IEEE Electron Device Letters
Paper