Anomalous Narrow Channel Effect in Trench-Isolated Buried-Channel P-MOSFET‘s
- J.A. Mandelman
- J. Alsmeier
- 1994
- IEEE Electron Device Letters
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306 results at IEEE Electron Device Letters
Experimental High Performance Sub-0.1 μm Channel nMOSFET's
- Y. Mii
- S. Rishton
- et al.
- 1994
- IEEE Electron Device Letters
Reliability Imposed Design Aspects of Submicrometer Polysilicon-Emitter Bipolar Transistors
- Joachim N. Burghartz
- Yuh-Jier Mii
- 1993
- IEEE Electron Device Letters
A Model for Anomalous Short-Channel Behavior in Submicron MOSFET’s
- H.I. Hanafi
- Y. Lii
- et al.
- 1993
- IEEE Electron Device Letters
Current Gain Rolloff in Graded-Base SiGe Heterojunction Bipolar Transistors
- Emmanuel F. Crabbé
- John D. Cressler
- et al.
- 1993
- IEEE Electron Device Letters
Gate current injection in MOSFET's with a split-gate (virtual drain) structure
- H.-S. Wong
- 1993
- IEEE Electron Device Letters
High-Performance Si/SiGe n-Type Modulation-Doped Transistors
- Khaled Ismail
- S. Rishton
- et al.
- 1993
- IEEE Electron Device Letters
Anomalous Voltage Overshoot During Turn-Off of Thin-Film n-Channel SOI MOSFET's
- E. Dubois
- Ghavam G. Shahidi
- et al.
- 1993
- IEEE Electron Device Letters
High-Low Polysilicon-Emitter SiGe-Base Bipolar Transistors
- Emmanuel F. Crabbé
- James H. Comfort
- et al.
- 1993
- IEEE Electron Device Letters
Extension of Impact-Ionization Multiplication Coefficient Measurements to High Electric Fields in Advanced Si BJT’s
- Enrico Zanoni
- Emmanuel F. Crabbé
- et al.
- 1993
- IEEE Electron Device Letters