Band alignment at the Cu2 ZnSn (SxSe1-x) 4 /CdS interface
- Richard Haight
- Aaron Barkhouse
- et al.
- 2011
- Applied Physics Letters
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2344 results at Applied Physics Letters
High temperature (1000°C) compatible Y-La-Si-O silicate gate dielectric in direct contact with Si with 7.7 Å equivalent oxide thickness
- Catherine Dubourdieu
- E. Cartier
- et al.
- 2011
- Applied Physics Letters
Effect of SiC wafer miscut angle on the morphology and Hall mobility of epitaxially grown graphene
- Christos Dimitrakopoulos
- Alfred Grill
- et al.
- 2011
- Applied Physics Letters
A simple in situ method to detect graphene formation at SiC surfaces
- Satoshi Oida
- James B. Hannon
- et al.
- 2011
- Applied Physics Letters
Fast electrical switching of spin injection in nonlocal spin transport devices
- Andreas Fuhrer
- Santos F. Alvarado
- et al.
- 2011
- Applied Physics Letters
Measurement of oxygen diffusion in nanometer scale HfO2 gate dielectric films
- Sufi Zafar
- Hemanth Jagannathan
- et al.
- 2011
- Applied Physics Letters
Increased metal-insulator transition temperatures in epitaxial thin films of V2 O3 prepared in reduced oxygen environments
- J. Brockman
- Nagaphani Aetukuri
- et al.
- 2011
- Applied Physics Letters
Manipulating stress in Cu/low-k dielectric nanocomposites
- Conal E. Murray
- Paul R. Besser
- et al.
- 2011
- Applied Physics Letters
Multilayer epitaxial graphene formed by pyrolysis of polycrystalline silicon-carbide grown on c-plane sapphire substrates
- Timothy J. Mcardle
- Jack O. Chu
- et al.
- 2011
- Applied Physics Letters
Materials and electrical characterization of physical vapor deposited Lax Lu1-x Oinf3 thin films on 300 mm silicon
- L.F. Edge
- T. Vo
- et al.
- 2011
- Applied Physics Letters