Publications

14 results at IEDM 2010

Device, circuit and system-level analysis of noise in multi-bit phase-change memory
- - Gael F. Close
  - Urs Frey
  - et al.
- 2010
- IEDM 2010
The impact of hole-induced electromigration on the cycling endurance of phase change memory
- - M. H. Lee
  - R. Cheek
  - et al.
- 2010
- IEDM 2010
Hysteretic drain-current behavior due to random telegraph noise in scaled-down FETs with high-κ/metal-gate stacks
- - Hiroshi Miki
  - Naoki Tega
  - et al.
- 2010
- IEDM 2010
High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility
- - Takeshi Nogami
  - Tibor Bolom
  - et al.
- 2010
- IEDM 2010