Hysteretic drain-current behavior due to random telegraph noise in scaled-down FETs with high-κ/metal-gate stacks
- Hiroshi Miki
- Naoki Tega
- et al.
- 2010
- IEDM 2010
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14 results at IEDM 2010
Voltage polarity effects in GST-based phase change memory: Physical origins and implications
- A. Padilla
- G.W. Burr
- et al.
- 2010
- IEDM 2010
An anomalous correlation between gate leakage current and threshold voltage fluctuation in advanced MOSFETs
- Zihong Liu
- Paul Chang
- et al.
- 2010
- IEDM 2010
High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility
- Takeshi Nogami
- Tibor Bolom
- et al.
- 2010
- IEDM 2010