Spin-transfer torque MRAM with reliable 2 ns writing for last level cache applicationsGuohan HuD. Kimet al.2019IEDM 2019
Reducing the Impact of Phase-Change Memory Conductance Drift on the Inference of large-scale Hardware Neural NetworksStefano AmbrogioM. Gallotet al.2019IEDM 2019
Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance ApplicationsJ. ZhangS. Pancharatnamet al.2019IEDM 2019
Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100)Clarissa ConvertinoKirsten E. Moselundet al.2019IEDM 2019