Filamentary Statistical Evolution from Nano-Conducting Path to Switching-Filament for Oxide-RRAM in Memory ApplicationsErnest WuTakashi Andoet al.2019IEDM 2019
Imaging, Modeling and Engineering of Strain in Gate-All-Around Nanosheet TransitorsS. RebohV. Boureauet al.2019IEDM 2019
Spin-transfer torque MRAM with reliable 2 ns writing for last level cache applicationsGuohan HuD. Kimet al.2019IEDM 2019
Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance ApplicationsJ. ZhangS. Pancharatnamet al.2019IEDM 2019
Ultra-scaled Conformal Scavenging Electrode with Superior Tunability for Short-channel RMG FinFET Workfunction and all-ALD 3D-compatible ReRAMJohn RozenK. Suuet al.2019IEDM 2019