Novel approach to reduce source/drain series resistance in high performance CMOS devices using self-aligned CoWP process for 45nm node UTSOI transistors with 20nm gate lengthJames PanAnna Topolet al.2006VLSI Technology 2006
Silicon-on-insulator MOSFETs with hybrid crystal orientationsM. YangK.K. Chanet al.2006VLSI Technology 2006
Lower resistance scaled metal contacts to silicide for advanced CMOSA. TopolC. Sherawet al.2006VLSI Technology 2006