Can carbon nanotube transistors be scaled without performance degradation?Aaron D. FranklinGeorge Tulevskiet al.2009IEDM 2009
Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applicationsK. ChengA. Khakifiroozet al.2009IEDM 2009
Reduction of random telegraph noise in high-κ / metal-gate stacks for 22 nm generation FETsN. TegaH. Mikiet al.2009IEDM 2009
Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyondH. KawasakiV.S. Baskeret al.2009IEDM 2009
Technologies to further reduce soft error susceptibility in SOIP. OldigesR.H. Dennardet al.2009IEDM 2009
Understanding mobility mechanisms in extremely scaled HfO2 (EOT 0.42 nm) using remote interfacial layer scavenging technique and V t-tuning dipoles with gate-first processT. AndoM.M. Franket al.2009IEDM 2009