Relevance of remote scattering in gate to channel mobility of thin-oxide CMOS devices
- Paul M. Solomon
- Min Yang
- 2004
- IEDM 2004
Publications
18 results at IEDM 2004
Successful dual damascene integration of extreme low k materials (k < 2.0) using a novel gap fill based integration scheme
- S.V. Nitta
- S. Purushothaman
- et al.
- 2004
- IEDM 2004
Simulation study of Ge n-channel 7.5 nm DGFETs of arbitrary crystallographic alignment
- S.E. Laux
- 2004
- IEDM 2004
Ultra-fast measurements of the inversion charge in MOSFETs and impact on measured mobility in high-k MOSFETs
- D. Singh
- P. Solomon
- et al.
- 2004
- IEDM 2004
Selectively formed high mobility strained Ge PMOSFETs for high performance CMOS
- Hulling Shang
- Jack O. Chu
- et al.
- 2004
- IEDM 2004
High performance and low power transistors integrated in 65nm bulk CMOS technology
- Z. Luo
- A. Steegen
- et al.
- 2004
- IEDM 2004
SiGe HBT technology with f max/f T = 350/300 GHz and gate delay below 3.3 ps
- M. Khater
- J.-S. Rieh
- et al.
- 2004
- IEDM 2004
Spintronic materials and devices: Past, present and future!
- Stuart S.P. Parkin
- 2004
- IEDM 2004