Theory of thin-film orientation by ion bombardment during deposition
- R. Mark Bradley
- James M. E. Harper
- et al.
- 1986
- Journal of Applied Physics
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2355 results at Journal of Applied Physics
High mobility two-dimensional hole gas in an al0.26ga 0.74as/gaas heterojunction
- W.I. Wang
- E. Mendez
- et al.
- 1986
- Journal of Applied Physics
Low-temperature deposition of high-quality silicon dioxide by plasma-enhanced chemical vapor deposition
- J. Batey
- E. Tierney
- 1986
- Journal of Applied Physics
Determination of the conduction-band discontinuity between in 0.53ga0.47as/in0.52al0.48as using n+-ingaas/inalas/n--ingaas capacitors
- C.K. Peng
- A. Ketterson
- et al.
- 1986
- Journal of Applied Physics
Titanium-tungsten contacts to silicon. II. Stability against aluminum penetration
- S.E. Babcock
- K.N. Tu
- 1986
- Journal of Applied Physics
Electron heating studies in silicon dioxide: Low fields and thick films
- D.J. DiMaria
- M.V. Fischetti
- et al.
- 1986
- Journal of Applied Physics
Ar ion laser-assisted chemical etching of molybdenum foils in air
- G. Koren
- 1986
- Journal of Applied Physics
Cross-sectional transmission electron microscopy investigation of Ti/Si reaction on phosphorus-doped polycrystalline silicon gate
- C.Y. Wong
- F.S. Lai
- et al.
- 1986
- Journal of Applied Physics
Oxygen precipitation retardation and recovery phenomena in Czochralski silicon: Experimental observations, nuclei dissolution model, and relevancy with nucleation issues
- T.Y. Tan
- C.Y. Kung
- 1986
- Journal of Applied Physics
The measurement of effective complex refractive indices for selected metal silicides
- R.D. Frampton
- E.A. Irene
- et al.
- 1986
- Journal of Applied Physics