Low-temperature deposition of high-quality silicon dioxide by plasma-enhanced chemical vapor deposition
- J. Batey
- E. Tierney
- 1986
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
Determination of the conduction-band discontinuity between in 0.53ga0.47as/in0.52al0.48as using n+-ingaas/inalas/n--ingaas capacitors
- C.K. Peng
- A. Ketterson
- et al.
- 1986
- Journal of Applied Physics
PaperTitanium-tungsten contacts to silicon. II. Stability against aluminum penetration
- S.E. Babcock
- K.N. Tu
- 1986
- Journal of Applied Physics
PaperFormation of intermediate phases, Ni3Si2 and Pt 6Si5: Nucleation, identification, and resistivity
- P. Gas
- F.M. D'Heurle
- et al.
- 1986
- Journal of Applied Physics
PaperElectron heating studies in silicon dioxide: Low fields and thick films
- D.J. DiMaria
- M.V. Fischetti
- et al.
- 1986
- Journal of Applied Physics
PaperInfrared thermal particle detection physics
- S. Utterback
- R.L. Melcher
- 1986
- Journal of Applied Physics
PaperIon-induced volatilization (IIV): A method for quantitative measurement of the amounts of perfluoropolyether lubricant on a particulate disk surface and in the media porosity
- J.W. Coburn
- H.F. Winters
- 1986
- Journal of Applied Physics
PaperElectrical conduction in polyimide films
- G.M. Sessler
- B. Hahn
- et al.
- 1986
- Journal of Applied Physics
PaperOxidation temperature dependence of the dc electrical conduction characteristics and dielectric strength of thin Ta2O5 films on silicon
- G.S. Oehrlein
- 1986
- Journal of Applied Physics
PaperComment on "Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor-phase epitaxy" (Journal of Applied Physics (1985) 57 (249))
- I.C. Noyan
- Armin Segmüller
- 1986
- Journal of Applied Physics
Paper