Doping dependence of the schottky-barrier height of ti-pt contacts to n-gallium arsenide
- R.F. Broom
- H.P. Meier
- et al.
- 1986
- Journal of Applied Physics
Publications
2357 results at Journal of Applied Physics
A reinvestigation of the etch products of silicon and XeF2: Doping and pressure effects
- F.A. Houle
- 1986
- Journal of Applied Physics
Disilicide solid solutions, phase diagram, and resistivities. I. TiSi 2-WSi2
- P. Gas
- F.J. Tardy
- et al.
- 1986
- Journal of Applied Physics
Effect of temperature on electrical and microstructural changes of coevaporated Ir-Si alloy films
- B.Z. Weiss
- K.N. Tu
- et al.
- 1986
- Journal of Applied Physics
High-purity GaAs grown by molecular-beam epitaxy
- W.I. Wang
- R.F. Marks
- et al.
- 1986
- Journal of Applied Physics
SiO2-induced substrate current and its relation to positive charge in field-effect transistors
- Z.A. Weinberg
- M.V. Fischetti
- et al.
- 1986
- Journal of Applied Physics
The measurement of effective complex refractive indices for selected metal silicides
- R.D. Frampton
- E.A. Irene
- et al.
- 1986
- Journal of Applied Physics
Oxygen precipitation retardation and recovery phenomena in Czochralski silicon: Experimental observations, nuclei dissolution model, and relevancy with nucleation issues
- T.Y. Tan
- C.Y. Kung
- 1986
- Journal of Applied Physics
Cross-sectional transmission electron microscopy investigation of Ti/Si reaction on phosphorus-doped polycrystalline silicon gate
- C.Y. Wong
- F.S. Lai
- et al.
- 1986
- Journal of Applied Physics
Ar ion laser-assisted chemical etching of molybdenum foils in air
- G. Koren
- 1986
- Journal of Applied Physics