Characterization of GaAs self-aligned refractory-gate metal-semiconductor field-effect transistor (MESFET) integrated circuits
- J.H. Magerlein
- D.J. Webb
- et al.
- 1987
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
In situ resistivity measurement of cobalt silicide formation
- G. Ottaviani
- K.N. Tu
- et al.
- 1987
- Journal of Applied Physics
PaperReal time optical profilometry as a probe of rates of laser-induced chemical vapor deposition
- Paul B. Comita
- Toivo T. Kodas
- 1987
- Journal of Applied Physics
PaperNonalloyed ohmic contacts to n-GaAs by solid-phase epitaxy of Ge
- E.D. Marshall
- B. Zhang
- et al.
- 1987
- Journal of Applied Physics
PaperElectrical transport properties of transition-metal disilicide films
- F. Nava
- K.N. Tu
- et al.
- 1987
- Journal of Applied Physics
PaperSurface temperature rise in multilayer solids induced by a focused laser beam
- Toivo T. Kodas
- Thomas H. Baum
- et al.
- 1987
- Journal of Applied Physics
PaperRapid thermal annealing of hydrogenated amorphous silicon grown at low temperature
- P. Fiorini
- I. Haller
- et al.
- 1987
- Journal of Applied Physics
PaperStrongly coupled ferromagnetic resonances of Fe films
- M. Pomerantz
- J.C. Slonczewski
- et al.
- 1987
- Journal of Applied Physics
PaperEffect of interface states on the electrical properties of W, WSi x, and WAlx Schottky contacts on GaAs
- A.C. Callegari
- D. Ralph
- et al.
- 1987
- Journal of Applied Physics
PaperLocalized epitaxial growth of ReSi2 on (111) and (001) silicon
- J.J. Chu
- L.J. Chen
- et al.
- 1987
- Journal of Applied Physics
Paper