Room temperature operation of a quantum-dot flash memory
- J.J. Welser
- Sandip Tiwari
- et al.
- 1997
- IEEE Electron Device Letters
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306 results at IEEE Electron Device Letters
Transient pass-transistor leakage current in SOI MOSFET's
- F. Assaderaghi
- G. Shahidi
- et al.
- 1997
- IEEE Electron Device Letters
Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
- S.H. Lo
- D.A. Buchanan
- et al.
- 1997
- IEEE Electron Device Letters
A 70-GHz fT low operating bias self-aligned p-type SiGe MODFET
- M. Arafa
- K. Ismail
- et al.
- 1996
- IEEE Electron Device Letters
DC and RF performance of 0.25 μm p-type SiGe MODFET
- M. Arafa
- P. Fay
- et al.
- 1996
- IEEE Electron Device Letters
Multilevel-spiral inductors using VLSI interconnect technology
- Joachim N. Burghartz
- Keith A. Jenkins
- et al.
- 1996
- IEEE Electron Device Letters
Low-voltage transient bipolar effect induced by dynamic floating-body charging in scaled PD/SOI MOSFET's
- Mario M. Pelella
- Jerry G. Fossum
- et al.
- 1996
- IEEE Electron Device Letters
Demonstration of npn InAs bipolar transistors with inverted base doping
- Paul E. Dodd
- Michael L. Lovejoy
- et al.
- 1996
- IEEE Electron Device Letters
High speed p-type SiGe modulation-doped field-effect transistors
- M. Arafa
- P. Fay
- et al.
- 1996
- IEEE Electron Device Letters
History dependence of output characteristics of silicon-on-insulator (SOI) MOSFET's
- Keith A. Jenkins
- J.Y.-C. Sun
- et al.
- 1996
- IEEE Electron Device Letters