Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy
- Alan C. Warren
- J. Woodall
- et al.
- 1990
- Applied Physics Letters
Publications
2347 results at Applied Physics Letters
Critical current density of strained multilayer thin films of Nd 1.83Ce0.17CuOx/YBa2Cu 3O7-δ
- R. Gross
- A. Gupta
- et al.
- 1990
- Applied Physics Letters
Effect of F co-implant during annealing of Be-implanted GaAs
- P.E. Hallali
- H. Baratte
- et al.
- 1990
- Applied Physics Letters
Self-propagating explosive reactions in Al/Ni multilayer thin films
- E. Ma
- C.V. Thompson
- et al.
- 1990
- Applied Physics Letters
Control of misoriented grains and pinholes in CoSi2 grown on Si(001)
- J.R. Jimenez
- L.M. Hsiung
- et al.
- 1990
- Applied Physics Letters
Kinetics of silicon epitaxy using SiH4 in a rapid thermal chemical vapor deposition reactor
- M. Liehr
- C.M. Greenlief
- et al.
- 1990
- Applied Physics Letters
Room-temperature oxidation of silicon catalyzed by Cu3Si
- J.M.E. Harper
- A. Charai
- et al.
- 1990
- Applied Physics Letters
Vapor phase hydrocarbon removal for Si processing
- Srinandan R. Kasi
- M. Liehr
- 1990
- Applied Physics Letters
Bias stress-induced instabilities in amorphous silicon nitride/hydrogenated amorphous silicon structures: Is the "carrier-induced defect creation" model correct?
- A. Gelatos
- Jerzy Kanicki
- 1990
- Applied Physics Letters
Application of selective epitaxy to fabrication of nanometer scale wire and dot structures
- John A. Lebens
- Charles S. Tsai
- et al.
- 1990
- Applied Physics Letters