Kinetics of silicon epitaxy using SiH4 in a rapid thermal chemical vapor deposition reactor
- M. Liehr
- C.M. Greenlief
- et al.
- 1990
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Effect of alignment layer conductivity on the bistability of surface-stabilized ferroelectric liquid-crystal devices
- Trieu C. Chieu
- K.H. Yang
- 1990
- Applied Physics Letters
PaperX-ray spectromicroscopy with a zone plate generated microprobe
- Harald Ade
- Janos Kirz
- et al.
- 1990
- Applied Physics Letters
PaperFormation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
- M.R. Melloch
- N. Otsuka
- et al.
- 1990
- Applied Physics Letters
PaperSimultaneous measurement of lateral and normal forces with an optical-beam-deflection atomic force microscope
- Gerhard Meyer
- Nabil M. Amer
- 1990
- Applied Physics Letters
PaperE' centers and nitrogen-related defects in SiO2 films
- J.H. Stathis
- J. Chapple-Sokol
- et al.
- 1990
- Applied Physics Letters
PaperLow noise YBa2Cu3O7-δ grain boundary junction dc SQUIDs
- R. Gross
- P. Chaudhari
- et al.
- 1990
- Applied Physics Letters
PaperHigh-power single-mode strained single quantum well InGaAs/AlGaAs lasers grown by molecular beam epitaxy on nonplanar substrates
- D.J. Arent
- L. Brovelli
- et al.
- 1990
- Applied Physics Letters
PaperMagnetoresistance measurements of doping symmetry and strain effects in GaSb-AlSb quantum wells
- W. Hansen
- T.P. Smith III
- et al.
- 1990
- Applied Physics Letters
PaperRegrown ohmic contacts to thin GaAs layers and two-dimensional electron gas
- A. Palevski
- P. Solomon
- et al.
- 1990
- Applied Physics Letters
Paper