Deep donor levels (DX centers) in III-V semiconductors
- P.M. Mooney
- 1990
- Journal of Applied Physics
Publications
2357 results at Journal of Applied Physics
Flux lattice behavior in high-Tc materials studied by neutron depolarization
- L. Crow
- R. Goyette
- et al.
- 1990
- Journal of Applied Physics
Oxidation and formation mechanisms in disilicides: VSi2 and CrSi2, inert marker experiments and interpretation
- O. Thomas
- L. Stolt
- et al.
- 1990
- Journal of Applied Physics
On the saturation effect in the picosecond near ultraviolet laser ablation of polyimide
- Mei-Chen Chuang
- Andrew C. Tam
- 1989
- Journal of Applied Physics
Collision broadening of optical gain in semiconductor lasers
- Doyeol Ahn
- 1989
- Journal of Applied Physics
Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area
- E.A. Fitzgerald
- G.P. Watson
- et al.
- 1989
- Journal of Applied Physics
A diffusive transport relaxation technique for studying laser-induced chemical vapor deposition reactions at high pressures
- Toivo T. Kodas
- Paul B. Comita
- 1989
- Journal of Applied Physics
Low-temperature deposition of silicon dioxide films from electron cyclotron resonant microwave plasmas
- T.V. Herak
- T.T. Chau
- et al.
- 1989
- Journal of Applied Physics
Influence of crack velocity thresholds on stabilized nonequilibrium fracture
- Robert F. Cook
- 1989
- Journal of Applied Physics
Thermally stable ohmic contacts to n-type GaAs. IV. Role of Ni on NiInW contacts
- Yih-Cheng Shih
- Masanori Murakami
- et al.
- 1989
- Journal of Applied Physics