Evidence for a negative electron-electron correlation energy in the dominant deep trapping center in silicon nitride films
- Sean E. Curry
- P. Lenahan
- et al.
- 1990
- Applied Physics Letters
Publications
2351 results at Applied Physics Letters
Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxy
- T.J. De Lyon
- J. Woodall
- et al.
- 1990
- Applied Physics Letters
Time-resolved investigations of sidewall recombination in dry-etched GaAs wires
- G. Mayer
- B.E. Maile
- et al.
- 1990
- Applied Physics Letters
Room-temperature oxidation of silicon catalyzed by Cu3Si
- J.M.E. Harper
- A. Charai
- et al.
- 1990
- Applied Physics Letters
Stable and shallow PdIn ohmic contacts to n-GaAs
- L.C. Wang
- X.Z. Wang
- et al.
- 1990
- Applied Physics Letters
Kinetics of silicon epitaxy using SiH4 in a rapid thermal chemical vapor deposition reactor
- M. Liehr
- C.M. Greenlief
- et al.
- 1990
- Applied Physics Letters
Surface melting of metal deposits during laser-induced chemical vapor deposition with a modulated continuous-wave laser
- Paul B. Comita
- Peter E. Price Jr.
- et al.
- 1990
- Applied Physics Letters
Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
- M.R. Melloch
- N. Otsuka
- et al.
- 1990
- Applied Physics Letters
Effects of the local environment on the properties of DX centers in Si-doped GaAs and dilute AlxGa1-xAs alloys
- E. Calleja
- F. Garcia
- et al.
- 1990
- Applied Physics Letters
Defect formation caused by a transient decrease in the ambient oxygen concentration during growth of YBa2Cu3O 7-δ films
- A. Gupta
- B.W. Hussey
- et al.
- 1990
- Applied Physics Letters