High-power single-mode strained single quantum well InGaAs/AlGaAs lasers grown by molecular beam epitaxy on nonplanar substrates
- D.J. Arent
- L. Brovelli
- et al.
- 1990
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Radiative recombination in surface-free n+/n-/n +GaAs homostructures
- L.M. Smith
- D.J. Wolford
- et al.
- 1990
- Applied Physics Letters
PaperLow noise YBa2Cu3O7-δ grain boundary junction dc SQUIDs
- R. Gross
- P. Chaudhari
- et al.
- 1990
- Applied Physics Letters
PaperN+ doping of gallium arsenide by rapid thermal oxidation of a silicon cap
- D.K. Sadana
- J.P. De Souza
- et al.
- 1990
- Applied Physics Letters
PaperMagnetoresistance measurements of doping symmetry and strain effects in GaSb-AlSb quantum wells
- W. Hansen
- T.P. Smith III
- et al.
- 1990
- Applied Physics Letters
PaperFe/Fe-N multilayer films with low coercivity zero magnetostriction and high saturation magnetization
- K.K. Shih
- M.E. Re
- et al.
- 1990
- Applied Physics Letters
PaperE' centers and nitrogen-related defects in SiO2 films
- J.H. Stathis
- J. Chapple-Sokol
- et al.
- 1990
- Applied Physics Letters
PaperTrapped positive charge in plasma-enhanced chemical vapor deposited silicon dioxide films
- D.A. Buchanan
- J.H. Stathis
- et al.
- 1990
- Applied Physics Letters
PaperTHz time-domain spectroscopy of high Tc substrates
- D. Grischkowsky
- Søren Keiding
- 1990
- Applied Physics Letters
PaperBias stress-induced instabilities in amorphous silicon nitride/hydrogenated amorphous silicon structures: Is the "carrier-induced defect creation" model correct?
- A. Gelatos
- Jerzy Kanicki
- 1990
- Applied Physics Letters
Paper