Scaling of ino.7gao.3as buried-channel MOSFETs
- Yanning Sun
- E.W. Kiewra
- et al.
- 2008
- IEDM 2008
Publications
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14201 results for Physical Sciences
Effect of elevated implant temperature on amorphization and activation in as-implanted silicon-on-insulator layers
- Katherine L. Saenger
- Stephen W. Bedell
- et al.
- 2008
- MRS Spring Meeting 2008
SET characteristics of phase change bridge devices
- Daniel Krebs
- Simone Raoux
- et al.
- 2008
- MRS Spring Meeting 2008
Extendibility study of a PVD Cu seed process with Ar+ Rf-Plasma enhanced coverage for 45nm interconnects
- Andrew H. Simon
- Tibor Bolom
- et al.
- 2008
- MRS Spring Meeting 2008
Crystallization characteristics of phase change nanoparticle arrays fabricated by self-assembly based lithography
- Yuan Zhang
- Simone Raoux
- et al.
- 2008
- MRS Spring Meeting 2008
Thickness-dependent crystallization behavior of phase change materials
- Simone Raoux
- Jean L. Jordan-Sweet
- et al.
- 2008
- MRS Spring Meeting 2008
Extendibility of NiPt silicide contacts for CMOS technology demonstrated to the 22-nm node
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2007
- IEDM 2007
(110) Channel, SiON gate-dielectric PMOS with record high Ion=1 mA/μm through channel stress and source drain external resistance (R ext) engineering
- B. Yang
- A. Waite
- et al.
- 2007
- IEDM 2007
Technology elements of a common platform bulk foundry offering (invited)
- P. Gilbert
- A. Steegen
- et al.
- 2007
- IEDM 2007
Measurements of inter-and-intra device transient thermal transport on SOI FETs
- P. Solomon
- M. Shamsa
- et al.
- 2007
- IEDM 2007