Flexural resonant samples for submonolayer measurements of oxygen on Si surfaces
- Russell W. Dreyfus
- 1991
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Conduction band structure of GexSi1-x using spatially resolved electron energy-loss scattering
- P.E. Batson
- J.F. Morar
- 1991
- Applied Physics Letters
PaperProperties of DX centers in AlxGa1-xAs co-doped with boron and silicon
- P.M. Mooney
- M.A. Tischler
- et al.
- 1991
- Applied Physics Letters
PaperHigh-power operation of strained InGaAs/AlGaAs single quantum well lasers
- A. Moser
- A. Oosenbrug
- et al.
- 1991
- Applied Physics Letters
PaperDetermination of epitaxial AlxGa1-xAs composition from x-ray diffraction measurements
- M.S. Goorsky
- T.F. Kuech
- et al.
- 1991
- Applied Physics Letters
PaperSelective growth of silicon-germanium alloys by atmospheric-pressure chemical vapor deposition at low temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1991
- Applied Physics Letters
PaperSubpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers
- Alan C. Warren
- N. Katzenellenbogen
- et al.
- 1991
- Applied Physics Letters
PaperHigh-frequency operation of heavily carbon-doped Ga0.51In 0.49P/GaAs surface-emitting light-emitting diodes grown by metalorganic molecular beam epitaxy
- T.J. De Lyon
- J. Woodall
- et al.
- 1991
- Applied Physics Letters
PaperHigh carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAs
- T.J. De Lyon
- N.I. Buchan
- et al.
- 1991
- Applied Physics Letters
PaperPhotoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces
- X. Yin
- H.-M. Chen
- et al.
- 1991
- Applied Physics Letters
Paper