Publications

2351 results at Applied Physics Letters

Highly carbon-doped p-type Ga_0.5In_0.5As and Ga _0.5In_0.5P by carbon tetrachloride in gas-source molecular beam epitaxy
- - T.P. Chin
  - P.D. Kirchner
  - et al.
- 1991
- Applied Physics Letters
Paper
Thermally stable, low-resistance NiInWN_x ohmic contacts to n-type GaAs prepared by sputter deposition
- - Masanori Murakami
  - Naftali Lustig
  - et al.
- 1991
- Applied Physics Letters
Paper
Wet etching of gold films compatible with high T_c superconducting thin films
- - W. Eidelloth
  - R.L. Sandstrom
- 1991
- Applied Physics Letters
Paper
Sub-μm, planarized, Nb-AlO_x-Nb Josephson process for 125 mm wafers developed in partnership with Si technology
- - M.B. Ketchen
  - D.J. Pearson
  - et al.
- 1991
- Applied Physics Letters
Paper
Fermi level pinning at epitaxial Si on GaAs(100) interfaces
- - J.A. Silberman
  - T.J. De Lyon
  - et al.
- 1991
- Applied Physics Letters
Paper
High-quality GaAs on sawtooth-patterned Si substrates
- - K. Ismail
  - F. Legoues
  - et al.
- 1991
- Applied Physics Letters
Paper
Wet etch process for patterning insulators suitable for epitaxial high T_c superconducting thin film multilevel electronic circuits
- - W. Eidelloth
  - W.J. Gallagher
  - et al.
- 1991
- Applied Physics Letters
Paper
High-differential mobility of hot electrons in delta-doped quantum wells
- - W. Ted Masselink
- 1991
- Applied Physics Letters
Paper
SiO₂ film decomposition reaction initiated by carbon impurities located at a Si-SiO₂ interface
- - S.I. Raider
  - S.R. Herd
  - et al.
- 1991
- Applied Physics Letters
Paper
Large anisotropy in optical properties of thin polyimide films of poly (p-phenylene biphenyltetracarboximide)
- - S. Herminghaus
  - D. Boese
  - et al.
- 1991
- Applied Physics Letters
Paper