Improved effective switching current (Ieff+) and capacitance methodology for CMOS circuit performance prediction and model-to-hardware correlation
- Xiaojun Yu
- Shu-Jen Han
- et al.
- 2008
- IEDM 2008
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14201 results for Physical Sciences
32nm general purpose bulk CMOS technology for high performance applications at low voltage
- F. Arnaud
- J. Liu
- et al.
- 2008
- IEDM 2008
Mechanisms of retention loss in Ge2Sb2Te 5-based phase-change memory
- Y.H. Shih
- J.Y. Wu
- et al.
- 2008
- IEDM 2008
A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)
- R. Beach
- T. Min
- et al.
- 2008
- IEDM 2008
22 nm technology compatible fully functional 0.1 μm 2 6T-sram cell
- B. Haran
- A. Kumar
- et al.
- 2008
- IEDM 2008
Electromigration reliability in nanoscale Cu interconnects
- C.-K. Hu
- L. Gignac
- et al.
- 2007
- MRS Fall Meeting 2007
Analytical model for RESET operation of phase change memory
- B. Rajendran
- J. Karidis
- et al.
- 2008
- IEDM 2008
MOSFET performance scaling: Limitations and future options
- Dimitri A. Antoniadis
- Ali Khakifirooz
- 2008
- IEDM 2008
A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid cu-adhesive bonding
- F. Liu
- R.R. Yu
- et al.
- 2008
- IEDM 2008
High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor
- B. Yang
- R. Takalkar
- et al.
- 2008
- IEDM 2008