Gallium desorption during growth of (Al,Ga)As by molecular beam epitaxy
- J.P. Reithmaier
- R.F. Broom
- et al.
- 1992
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Kinetics of nucleation and growth of Si on SiO2 in very low pressure SiH4 chemical vapor deposition
- S.S. Dana
- M. Liehr
- et al.
- 1992
- Applied Physics Letters
PaperCompositional variation and ordering of GaxIn1-xP on GaAs structured substrates
- N.I. Buchan
- A. Jakubowicz
- et al.
- 1992
- Applied Physics Letters
PaperFiltered arc deposition of amorphous diamond
- Richard Lossy
- David L. Pappas
- et al.
- 1992
- Applied Physics Letters
PaperBoron redistribution in arsenic-implanted silicon and short-channel effects in metal-oxide-semiconductor field effect transistors
- D.K. Sadana
- A. Acovic
- et al.
- 1992
- Applied Physics Letters
PaperLarge area, low voltage, transit time limited InGaAs metal semiconductor metal photodetectors
- Stephen E. Ralph
- M. Hargis
- et al.
- 1992
- Applied Physics Letters
PaperNew method for determining the nonlinear optical coefficients of thin films
- Y. Hase
- K. Kumata
- et al.
- 1992
- Applied Physics Letters
PaperUse of electron-beam charging for in-process inspection of silicide complementary metal-oxide-semiconductor gate electrode isolation
- Keith A. Jenkins
- P. Agnello
- et al.
- 1992
- Applied Physics Letters
PaperEnhanced electro-optic effect in amorphous hydrogenated silicon based waveguides
- M. Zelikson
- J. Salzman
- et al.
- 1992
- Applied Physics Letters
PaperParamagnetic centers of amorphous carbon thin films: Influence of hydrogen content and O2 permeation
- M. Hoinkis
- E.D. Tober
- et al.
- 1992
- Applied Physics Letters
Paper