Heavy arsenic doping of silicon grown by atmospheric-pressure chemical vapor deposition at low temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1992
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Optoelectronic devices based on type II polytype tunnel heterostructures
- H. Ohno
- L. Esaki
- et al.
- 1992
- Applied Physics Letters
PaperX-ray reflectivity analysis of giant-magnetoresistance spin-valve layered structures
- T.C. Huang
- J.-P. Nozieres
- et al.
- 1992
- Applied Physics Letters
PaperCross-sectional imaging and spectroscopy of GaAs doping superlattices by scanning tunneling microscopy
- R.M. Feenstra
- E.T. Yu
- et al.
- 1992
- Applied Physics Letters
PaperRefractive index determination of SiGe using reactive ion etching/ellipsometry: Application of the depth profiling of the GE concentration
- G.M.W. Kroesen
- G.S. Oehrlein
- et al.
- 1992
- Applied Physics Letters
PaperIn situ transmission electron microscopy studies of silicide-mediated crystallization of amorphous silicon
- C. Hayzelden
- J.L. Batstone
- et al.
- 1992
- Applied Physics Letters
PaperTwin formation in Ag seeded Co/Pt multilayers grown on GaAs by molecular beam epitaxy
- N.-H. Cho
- Kannan M. Krishnan
- et al.
- 1992
- Applied Physics Letters
PaperNature of band bending at semiconductor surfaces by contactless electroreflectance
- X. Yin
- Xinxin Guo
- et al.
- 1992
- Applied Physics Letters
PaperEffect of oxygen pressure on Tl2Ca2Ba 2Cu3O10±δ formation
- B.T. Ahn
- W.-Y. Lee
- et al.
- 1992
- Applied Physics Letters
PaperElemental marking of Si on Si(100) interfaces
- S. Gates
- D.D. Koleske
- 1992
- Applied Physics Letters
Paper