Charge transfer and low-temperature electron mobility in a strained Si layer in relaxed Si1-xGex
- Frank Stern
- Steven E. Laux
- 1992
- Applied Physics Letters
Paper
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2351 results at Applied Physics Letters
Luminescence degradation in porous silicon
- M.A. Tischler
- R.T. Collins
- et al.
- 1992
- Applied Physics Letters
PaperInterfacial reactions and Schottky barriers of Pt and Pd on epitaxial Si1-xGex alloys
- H.K. Liou
- X. Wu
- et al.
- 1992
- Applied Physics Letters
PaperMechanisms of copper chemical vapor deposition
- Susan L. Cohen
- Michael Liehr
- et al.
- 1992
- Applied Physics Letters
PaperTemporal profile of optical transmission probe for pulsed-laser heating of amorphous silicon films
- Hee K. Park
- Xianfan Xu
- et al.
- 1992
- Applied Physics Letters
PaperDX centers in Sn-doped AlxGa1-xAs grown by metalorganic vapor phase epitaxy at T≥850°C
- P.M. Mooney
- B.D. Parker
- et al.
- 1992
- Applied Physics Letters
PaperElemental marking of Si on Si(100) interfaces
- S. Gates
- D.D. Koleske
- 1992
- Applied Physics Letters
PaperExtremely high frequency pulse magnetic resonance by picosecond magneto-optic sampling
- M.R. Freeman
- M.J. Brady
- et al.
- 1992
- Applied Physics Letters
PaperLocal mirror temperatures of red-emitting (Al)GaInP quantum-well laser diodes by Raman scattering and reflectance modulation measurements
- P.W. Epperlein
- G.L. Bona
- et al.
- 1992
- Applied Physics Letters
PaperGrowth mode and dislocation distribution in the ZnSe/GaAs (100) system
- S. Guha
- H. Munekata
- et al.
- 1992
- Applied Physics Letters
Paper