Absence of electrical activity at high-angle grain boundaries in zone-melt-recrystallized silicon-on-insulator films
- P.V. Evans
- D.A. Smith
- et al.
- 1992
- Applied Physics Letters
Paper
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2351 results at Applied Physics Letters
Raman scattering from H or O terminated porous Si
- J.C. Tsang
- M.A. Tischler
- et al.
- 1992
- Applied Physics Letters
PaperEffect of oxygen pressure on Tl2Ca2Ba 2Cu3O10±δ formation
- B.T. Ahn
- W.-Y. Lee
- et al.
- 1992
- Applied Physics Letters
PaperCharacterization of diamondlike carbon by infrared spectroscopy
- A. Grill
- V.V. Patel
- 1992
- Applied Physics Letters
PaperImpact ionization and positive charge formation in silicon dioxide films on silicon
- D.J. DiMaria
- D. Arnold
- et al.
- 1992
- Applied Physics Letters
PaperOptical emission properties of semi-insulating GaAs grown at low temperatures by molecular beam epitaxy
- R. Enrique Viturro
- Michael R. Melloch
- et al.
- 1992
- Applied Physics Letters
PaperElectromechanical deflections of piezoelectric tubes with quartered electrodes
- C. Julian Chen
- 1992
- Applied Physics Letters
PaperElectrical characterization to 4 THz of N- and P-type GaAs using THz time-domain spectroscopy
- N. Katzenellenbogen
- D. Grischkowsky
- 1992
- Applied Physics Letters
PaperGrowing thin magnetic films with a mask: Distinguishing between magnetic and instrumental asymmetries
- R. Allenspach
- A. Bischof
- et al.
- 1992
- Applied Physics Letters
PaperDoping concentration dependence of radiance and optical modulation bandwidth in carbon-doped Ga0.51In0.49P/GaAs light-emitting diodes grown by gas source molecular beam epitaxy
- T.J. De Lyon
- J. Woodall
- et al.
- 1992
- Applied Physics Letters
Paper