Nonalloyed ohmic contacts to n-Si using a strained Si0.50Ge 0.50 buffer layer
- Hsing-Kuen Liou
- Edward S. Yang
- et al.
- 1993
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Time-resolved scanning tunneling microscopy through tunnel distance modulation
- M.R. Freeman
- G. Nunes Jr.
- 1993
- Applied Physics Letters
PaperSpatially resolved Raman spectroscopy of a step graded Ge xSi1-x strain relief structure
- J.C. Tsang
- F.H. Dacol
- et al.
- 1993
- Applied Physics Letters
Paper1.3 μm decoupled confinement heterostructure lasers grown by chemical beam epitaxy
- Stefan Hausser
- Christoph S. Harder
- et al.
- 1993
- Applied Physics Letters
PaperImpact ionization in silicon
- E. Cartier
- M.V. Fischetti
- et al.
- 1993
- Applied Physics Letters
PaperAdhesion studies of Cu-Cr alloys on Al2O3
- Chin-Jong Chan
- Chin-An Chang
- et al.
- 1993
- Applied Physics Letters
PaperLow-temperature selective-area deposition of metals: Chemical vapor deposition of gold from ethyl(trimethylphosphine)gold(I)
- M.M. Banaszak Holl
- P.F. Seidler
- et al.
- 1993
- Applied Physics Letters
PaperDislocations and strain relief in compositionally graded layers
- 1993
- Applied Physics Letters
PaperFemtosecond ellipsometric study of nonequilibrium carrier dynamics in Ge and epitaxial Si1-xGex
- H.R. Choo
- X.F. Hu
- et al.
- 1993
- Applied Physics Letters
PaperEpitaxial Si films on Ge(100) grown via H/Cl exchange
- S. Gates
- D.D. Koleske
- et al.
- 1993
- Applied Physics Letters
Paper