Tunneling spectroscopy of midgap states induced by arsenic precipitates in low-temperature-grown GaAs
- R.M. Feenstra
- A. Vaterlaus
- et al.
- 1993
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Simulation of three-dimensional director structures in twisted nematic liquid crystal displays
- Alan Lien
- 1993
- Applied Physics Letters
PaperPreparation of (In,Mn)As/(Ga,Al)Sb magnetic semiconductor heterostructures and their ferromagnetic characteristics
- H. Munekata
- A. Zaslavsky
- et al.
- 1993
- Applied Physics Letters
PaperIon bombardment energy distributions in a radio frequency induction plasma
- J. Hopwood
- 1993
- Applied Physics Letters
PaperEvidence of a shallow junction formation from plasma enhanced chemical vapor deposition of boron nitride and silicon boron nitride
- Tue Nguyen
- Son Van Nguyen
- et al.
- 1993
- Applied Physics Letters
PaperDegradation of superconducting tunnel junction characteristics with increasing barrier transparency
- A.W. Kleinsasser
- F. Rammo
- et al.
- 1993
- Applied Physics Letters
PaperResidual critical current in high Tc bicrystal grain boundary junctions
- E. Sarnelli
- P. Chaudhari
- et al.
- 1993
- Applied Physics Letters
PaperGe segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere
- D.A. Grützmacher
- T.O. Sedgwick
- et al.
- 1993
- Applied Physics Letters
PaperSystematics of electron mobility in Si/SiGe heterostructures
- S. Nelson
- K. Ismail
- et al.
- 1993
- Applied Physics Letters
PaperMechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation
- J.P. De Souza
- D.K. Sadana
- 1993
- Applied Physics Letters
Paper