Reliability and structural design of a wafer-level 3D integration scheme with W TSVs based on Cu-oxide hybrid wafer bonding
- K.N. Chen
- T.M. Shaw
- et al.
- 2010
- IEDM 2010
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14201 results for Physical Sciences
High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility
- Takeshi Nogami
- Tibor Bolom
- et al.
- 2010
- IEDM 2010
An anomalous correlation between gate leakage current and threshold voltage fluctuation in advanced MOSFETs
- Zihong Liu
- Paul Chang
- et al.
- 2010
- IEDM 2010
A 0.039um2 high performance eDRAM cell based on 32nm high-K/metal SOI technology
- Nauman Z. Butt
- Kevin McStay
- et al.
- 2010
- IEDM 2010
Device, circuit and system-level analysis of noise in multi-bit phase-change memory
- Gael F. Close
- Urs Frey
- et al.
- 2010
- IEDM 2010
Physical origin of pFET threshold voltage modulation by ge channel ion implantation (GC-I/I)
- Yoshinori Tsuchiya
- Nathaniel Berliner
- et al.
- 2010
- IEDM 2010
Voltage polarity effects in GST-based phase change memory: Physical origins and implications
- A. Padilla
- G.W. Burr
- et al.
- 2010
- IEDM 2010
Graphene-based fast electronics and optoelectronics
- Ph. Avouris
- Yu-Ming Lin
- et al.
- 2010
- IEDM 2010
RF performance of short channel graphene field-effect transistor
- Yanqing Wu
- Yu-Ming Lin
- et al.
- 2010
- IEDM 2010
Stress liner proximity technique to enhance carrier mobility in high-κ metal gate MOSFETs
- Dechao Guo
- Kathryn Schonenberg
- et al.
- 2009
- MRS Fall Meeting 2009