Enhancement-mode buried-channel In0.7Ga0.3As/ In0.52Al0.48 MOSFETs with high-κ gate dielectrics
- Yanning Sun
- E.W. Kiewra
- et al.
- 2007
- IEEE Electron Device Letters
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306 results at IEEE Electron Device Letters
Strained-Si channel super-self-aligned back-gate/double-gate planar transistors
- Hao Lin
- Haitao Liu
- et al.
- 2007
- IEEE Electron Device Letters
Improved Carrier Injection in Ultrathin-Body SOI Schottky-Barrier MOSFETs
- M. Zhang
- J. Knoch
- et al.
- 2007
- IEEE Electron Device Letters
On the control of short-channel effect for MOSFETs with reverse halo implantation
- Huilong Zhu
- Huicai Zhong
- et al.
- 2007
- IEEE Electron Device Letters
Process optimization for high electron mobility in nMOSFETs with aggressively scaled HfO2/metal stacks
- V. Narayanan
- K. Maitra
- et al.
- 2006
- IEEE Electron Device Letters
OFF-state modulation of SOI floating-body
- Josephine B. Chang
- Jeffrey W. Sleight
- et al.
- 2006
- IEEE Electron Device Letters
Gate-dielectric permitivity and metal-gate work-function tradeoff in Lmet = 25 nm PDSOI device characteristics
- Dechao Guo
- Andres Bryant
- et al.
- 2006
- IEEE Electron Device Letters
Optimal UTB FD/SOI device structure using thin BOX for sub-50-nm SRAM design
- Saibal Mukhopadhyay
- Keunwoo Kim
- et al.
- 2006
- IEEE Electron Device Letters
Effect of tensile uniaxial stress on the electron transport properties of deeply scaled FD-SOI n-type MOSFETs
- H. Nayfeh
- D. Singh
- et al.
- 2006
- IEEE Electron Device Letters
Strained ultrahigh performance fully depleted nMOSFETs with ft of 330 GHz and sub-30-nm gate lengths
- D. Singh
- Keith A. Jenkins
- et al.
- 2006
- IEEE Electron Device Letters