A Subnanosecond Josephson Tunneling Memory Cell with Nondestructive ReadoutHans H. Zappe1975IEEE JSSC
Special Correspondence Effect of Randomness in the Distribution of Impurity Ions on FET Thresholds in Integrated ElectronicsRobert W. Keyes1975IEEE JSSC
An Experimental Multiplier Circuit Based on Superconducting Josephson DevicesDennis J. Herrell1975IEEE JSSC
High Performance MOS Integrated Circuit Using the Ion Implantation TechniqueFrank F. FangHans S. Rupprecht1975IEEE JSSC
Capacitance Models for Integrated Circuit Metallization WiresAlbert E. RuehliPierce A. Brennan1975IEEE JSSC
Subthreshold Design Considerations for Insulated Gate Field-Effect TransistorsRonald R. Troutman1974IEEE JSSC
Design of Ion-Implanted MOSFET's With Very Small Physical DimensionsRobert H. DennardFritz H. Gaensslenet al.1974IEEE JSSC