Systematic characterization of pseudomorphic (110) intrinsic SiGe epitaxial films for hybrid orientation technology with embedded SiGe source/drain
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PECVD Low-k (∼2.7) dielectric SiCOH film development and integration for 65 nm CMOS devices
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Conference paperLower-k SiCOH integration for 65 nm ground rules
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Conference paperLow-k/copper integration scheme suitable for ULSI manufacturing from 90nm to 45nm nodes
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- Optics East 2005
Conference paperInvestigation of CMOS devices with embedded SiGe source/drain on hybrid orientation substrates
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- VLSI Technology 2005
Conference paperCleans for Al vias in a 0.175 μm Dual Damascene Process
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Conference paperAuger study of preferred sputtering on binary alloy surfaces
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- Surface Science
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