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Demonstration of CAM and TCAM using phase change devicesBipin RajendranRoger W. Cheeket al.2011IMW 2011
Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te 5J.S. WashingtonEric A. Josephet al.2011Journal of Applied Physics
The impact of hole-induced electromigration on the cycling endurance of phase change memoryM. H. LeeR. Cheeket al.2010IEDM 2010
Device, circuit and system-level analysis of noise in multi-bit phase-change memoryGael F. CloseUrs Freyet al.2010IEDM 2010