Gate stacks for silicon, silicon germanium, and III-V channel MOSFETsMartin M. FrankYu Zhuet al.2014ECS Meeting 2014
Subtractive W contact and local interconnect co-integration (CLIC)Fei LiuBenjamin Fletcheret al.2013IITC 2013
A scalable volume-confined phase change memory using physical vapor depositionS.C. LaiS. Kimet al.2013VLSI Technology 2013
Engineering future light emitting diodes and photovoltaics with inexpensive materials: Integrating ZnO and Si into GaN-based devicesCan BayramK.-T. Shiuet al.2013SPIE OPTO 2013
High efficiency Cu2ZnSnSe4 solar cells with a TiN diffusion barrier on the molybdenum bottom contactByungha ShinYu Zhuet al.2012PVSC 2012
Aggressive sige channel gate stack scaling by remote oxygen scavenging: Gate-first pFET performance and reliabilityMartin M. FrankEduard A. Cartieret al.2012ECS Meeting 2012
Strain engineered extremely thin SOI (ETSOI) for high-performance CMOSA. KhakifiroozKangguo Chenget al.2012VLSI Technology 2012
Optimization of programming current on endurance of phase change memorySangbum KimPei-Ying Duet al.2012VLSI-TSA 2012
Transmission electron microscopy characterization of FinFET - Understanding the 3D structure by 2D imaging techniqueYu ZhuJemima Gonsalves2011ISTFA 2011
Sub-25nm FinFET with advanced fin formation and short channel effect engineeringTenko YamashitaVeeraraghvan S. Baskeret al.2011VLSI Technology 2011