Exciton or hydrogen diffusion in SiO2?
- Z.A. Weinberg
- D.R. Young
- et al.
- 2008
- Journal of Applied Physics
Paper
Publications
31 results for D.R. Young
Radiation damage in silicon dioxide films exposed to reactive ion etching
- D.J. DiMaria
- L.M. Ephrath
- et al.
- 2008
- Journal of Applied Physics
PaperMeasurements of hydrogen in metal-oxide-semiconductor structures using nuclear reaction profiling
- A.D. Marwick
- D.R. Young
- 1988
- Journal of Applied Physics
PaperDefect microchemistry at the SiO2/Si interface
- G.W. Rubloff
- K. Hofmann
- et al.
- 1987
- Physical Review Letters
PaperHigh temperature reaction and defect chemistry at the Si/SiO2 interface
- K. Hofmann
- G.W. Rubloff
- et al.
- 1987
- Applied Surface Science
PaperHole trapping in SiO2 films annealed in low-pressure oxygen atmosphere
- K. Hofmann
- D.R. Young
- et al.
- 1987
- Journal of Applied Physics
PaperRole of oxygen in defect-related breakdown in thin SiO2 films on Si (100)
- K. Hofmann
- G.W. Rubloff
- et al.
- 1987
- Journal of Applied Physics
PaperReduction of electron and hole trapping in SiO2 by rapid thermal annealing
- Z.A. Weinberg
- D.R. Young
- et al.
- 1984
- Applied Physics Letters
PaperCurrent-induced hydrogen migration and interface trap generation in aluminum-silicon dioxide-silicon capacitors
- F.J. Feigl
- R. Gale
- et al.
- 1984
- Nuclear Inst. and Methods in Physics Research, B
PaperHydrogen migration under avalanche injection of electrons in Si metal-oxide-semiconductor capacitors
- R. Gale
- F.J. Feigl
- et al.
- 1983
- Journal of Applied Physics
Paper