EPR evidence for a positively charged vacancy-oxygen defect in silicon
- Paul R. Brosious
- 2008
- Applied Physics Letters
Paper
Publications
7 results for P.R. Brosious
RADIAL DISTRIBUTION OF OXYGEN MOLECULAR IONS IN DIODE REACTOR.
- Y.H. Lee
- P.R. Brosious
- 1986
- Symposium on Plasma Processing 1986
Conference paperROLE OF Ar + , CH4 + , O2 + AND BACKSCATTERED Pb + IONS DURING Nb/OXIDE/PbAuIn EDGE JUNCTION FABRICATION.
- P.R. Brosious
- 1985
- IEEE Transactions on Magnetics
PaperThe role of Ar+, CH+4 O+2 and backscattered Pb+ ions during nb/oxide/pbauin edge junction fabrication
- P.R. Brosious
- 1985
- IEEE Transactions on Magnetics
PaperElectron irradiation effects in lead-alloy Josephson junctions
- Y.H. Lee
- P.R. Brosious
- 1982
- Applied Physics Letters
PaperHigh‐temperature ion implantation in diamond
- Y.H. Lee
- P.R. Brosious
- et al.
- 1978
- physica status solidi (a)
PaperElectron paramagnetic resonance in diamond implanted at various energies and temperatures
- P.R. Brosious
- Y.H. Lee
- et al.
- 1974
- physica status solidi (a)
Paper