Gate tunneling currents in ultrathin oxide metal-oxide-silicon transistorsJin CaiChih-Tang Sah2001Journal of Applied PhysicsPaper
Photoionization cross sections of a two-electron donor center in siliconT.H. NingC.T. Sah1976Physical Review BPaper
INVITED: Electron beam-accessed data storage in MOS capacitorsFloyd O. ArntzHoward K. Rockstadet al.1976ISSCC 1976Conference paper
Effects of inhomogeneities of surface-oxide charges on the electron energy levels in a semiconductor surface-inversion layerT.H. NingC.T. Sah1974Physical Review BPaper