Compound semiconductor surface and interface problems in liquid phase epitaxy (lpe)
- M.B. Small
- R.M. Potemski
- 1989
- Proceedings of SPIE 1989
Conference paper
Publications
42 results for M.B. Small
Al diffusivity as a function of growth rate during the formation of (GaAl)As heterojunctions by liquid phase epitaxy
- M.B. Small
- R. Ghez
- et al.
- 1981
- Journal of Applied Physics
PaperThe behavior of dislocations in GaAs substrates during the growth of GaxAl1-xAs epitaxial layers
- H. Booyens
- J.H. Basson
- et al.
- 1981
- Journal of Applied Physics
PaperMisfit dislocations and the morphology of gallium aluminum arsenide epitaxial layers grown on gallium arsenide
- H. Booyens
- M.B. Small
- et al.
- 1981
- Journal of Applied Physics
PaperA new structure for high-powered injection lasers
- M.B. Small
- R.T. Lynch Jr.
- 1981
- Journal of Applied Physics
PaperGrowth and dissolution of ternary alloys of III-V compounds by liquid phase epitaxy and the formation of heterostructures
- R. Ghez
- M.B. Small
- 1981
- Journal of Crystal Growth
PaperAn automated system for the growth of multilayered structures in the (GaAl)As system by LPE
- M.B. Small
- J.C. Blackwell
- et al.
- 1979
- Journal of Crystal Growth
PaperThreshold for optically induced dislocation glide in GaAs-AlGaAs double heterostructures: Degradation via a new cooperative phenomenon?
- B. Monemar
- R.M. Potemski
- et al.
- 1978
- Physical Review Letters
PaperConditions for constant growth rate by LPE from a cooling, static solution
- M.B. Small
- R. Ghez
- 1978
- Journal of Crystal Growth
PaperAn explanation for the phenomenon of meniscus lines on the surfaces of (GaAl) as alloys grown by LPE
- M.B. Small
- K.H. Bachem
- et al.
- 1977
- Journal of Crystal Growth
Paper