High quality interfacial layer formation for Si0.75Ge0.25 (100) high-k metal gate stack
- S. Siddiqui
- R. Galatage
- et al.
- 2020
- Microelectronic Engineering
Paper
Publications
7 results for G. Raja Muthinti
Sensitivity analysis and line edge roughness determination of 28-nm pitch silicon fins using Mueller matrix spectroscopic ellipsometry-based optical critical dimension metrology
- Dhairya Dixit
- Samuel O'Mullane
- et al.
- 2015
- J. Micro/Nanolithogr. MEMS MOEMS
PaperSilicon fin line edge roughness determination and sensitivity analysis by Mueller matrix spectroscopic ellipsometry based scatterometry
- Dhairya Dixit
- Samuel O'Mullane
- et al.
- 2015
- SPIE Advanced Lithography 2015
Conference paperOptical properties of pseudomorphic Ge1-xSnx (x = 0 to 0.11) alloys on Ge(001)
- Manasa Medikonda
- Gangadhara R. Muthinti
- et al.
- 2014
- JVSTB
PaperMultitechnique metrology methods for evaluating pitch walking in 14 nm and beyond FinFETs
- Robin Chao
- Kriti K. Kohli
- et al.
- 2014
- J. Micro/Nanolithogr. MEMS MOEMS
PaperNovel in-line metrology methods for Fin pitch walking monitoring in 14nm node and beyond
- Robin Chao
- Kriti Kohli
- et al.
- 2014
- SPIE Advanced Lithography 2014
Conference paperEffect of germanium concentration on the dielectric function of strained Si 1-xGe x films
- Manasa Medikonda
- Gangadhara R. Muthinti
- et al.
- 2012
- ISTDM 2012
Conference paper