Divacancy binding enthalpy and contribution of divacancies to self-diffusion in Si
- J.A. Van Vechten
- 1986
- Physical Review B
Paper
Publications
44 results for J.A. Van Vechten
Consequences of anion vacancy nearest-neighbor hopping in III-V compound semiconductors: Drift in InP metal-insulator-semiconductor field-effect transistors
- J.A. Van Vechten
- J.F. Wager
- 1985
- Journal of Applied Physics
PaperAtomic model for the M center in InP
- J.F. Wager
- J.A. Van Vechten
- 1985
- Physical Review B
PaperAsymmetry of anion and cation vacancy migration enthalpies in III-V compound semiconductors: Role of the kinetic energy
- J.A. Van Vechten
- J.F. Wager
- 1985
- Physical Review B
PaperTemperature dependence of transverse acoustic phonons in semiconductors
- J.A. Van Vechten
- 1985
- Physical Review B
PaperKinetic segregation of AlAs-GaAs during 〈110〉 MBE
- J.A. Van Vechten
- 1985
- Journal of Crystal Growth
PaperEXTENDED AMORPHOUS VACANCIES. AN ALTERNATIVE TO THE SELF-INTERSTITIAL IN Si.
- J.A. Van Vechten
- 1984
- ICDS 1984
Conference paperLASER-SOLID INTERACTIONS: LOCALIZATION OF MOMENTUM AND OF ENERGY.
- J.A. Van Vechten
- 1983
- MRS Proceedings 1983
Conference paperBOSE CONDENSATION AND THE ATHERMAL NATURE OF PULSED LASER ANNEALING.
- J.A. Van Vechten
- 1983
- Interactions Laser-Solides 1983
Conference paperOrigin of CW laser generated high efficiency AlGaAs microstructures
- J.A. Van Vechten
- 1983
- Physica B+C
Paper