On the Mott-Cabrera oxidation rate equation and the inverse-logarithmic law
- Richard Ghez
- 2003
- The Journal of Chemical Physics
Paper
Publications
42 results for R. Ghez
The stability of growing or evaporating crystals
- R. Ghez
- H.G. Cohen
- et al.
- 1993
- Journal of Applied Physics
PaperReactive diffusion in a prototype system: nickel - aluminum II: The ordered Cu3Au rule and the sequence of phase formation, nucleation
- F.M. d'Heurle
- R. Ghez
- 1992
- Thin Solid Films
PaperReactive diffusion in a prototype system: nickel-aluminum I: Non-constant diffusion coefficient
- F.M. d'Heurle
- R. Ghez
- 1992
- Thin Solid Films
PaperStability of crystals that grow or evaporate by step propagation
- R. Ghez
- H.G. Cohen
- et al.
- 1990
- Applied Physics Letters
PaperKinetics of fast steps on crystal surfaces and its application to the molecular beam epitaxy of silicon
- R. Ghez
- Subramanian S. Iyer
- 1988
- IBM J. Res. Dev
PaperThermal oxidation of silicon: New experimental results and models
- Eugene A. Irene
- R. Ghez
- 1987
- Applied Surface Science
PaperMore on the concentration dependence of Fick's laws
- R. Ghez
- W.E. Langlois
- 1986
- American Journal of Physics
PaperAsymptotic estimates of diffusion times for rapid thermal annealing
- J.D. Fehribach
- R. Ghez
- et al.
- 1985
- Applied Physics Letters
PaperDIFFUSION OF ION-IMPLANTED BORON AND PHOSPHORUS DURING RAPID THERMAL ANNEALING OF SILICON.
- G.S. Oehrlein
- R. Ghez
- et al.
- 1984
- ICDS 1984
Conference paper