Formation of silicide thin films by solid state reaction
- P. Gas
- F.M. d'Heurle
- 1993
- Applied Surface Science
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159 results for F.M. D'Heurle
Phase formations in the copper-germanium system: Reactions, structures and resistivities
- F.M. d'Heurle
- J. Gupta
- 1993
- Applied Surface Science
Diffusion of elements implanted in amorphous titanium disilicide
- F.M. d'Heurle
- J.M. Cotte
- et al.
- 1993
- Applied Surface Science
The influence of silicon substrate crystallinity and doping on TiSi2 thin film morphology
- T.E. Karlin
- S. Nygren
- et al.
- 1993
- Applied Surface Science
Electrical evaluation of high-temperature effects on gate oxide integrity in a self-aligned CoSi2 MOS process
- T.E. Karlin
- S.-L. Zhang
- et al.
- 1993
- Applied Surface Science
Interface reactions with formation of a solid phase on a solid substrate: a short overview
- F.M. d'Heurle
- 1993
- MSF
The dominant diffusing species and initial phase formation in Al-Cu, Mg-Cu, and Mg-Ni systems
- Q.Z. Hong
- F.M. D'Heurle
- 1992
- Journal of Applied Physics
Reactive diffusion in a prototype system: nickel - aluminum II: The ordered Cu3Au rule and the sequence of phase formation, nucleation
- F.M. d'Heurle
- R. Ghez
- 1992
- Thin Solid Films
Reactive diffusion in a prototype system: nickel-aluminum I: Non-constant diffusion coefficient
- F.M. d'Heurle
- R. Ghez
- 1992
- Thin Solid Films
Stresses from solid state reactions: a simple model, silicides
- S.-L. Zhang
- F.M. d'Heurle
- 1992
- Thin Solid Films