Reduction of electromigration in aluminum films by copper doping
- Irving Ames
- Francois M. D'Heurle
- et al.
- 2000
- IBM J. Res. Dev
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159 results for F.M. D'Heurle
Phase formation and resistivity in the ternary system Ti-Nb-Si
- Aliette Mouroux
- Marylène Roux
- et al.
- 1999
- Journal of Applied Physics
In situ characterization of titanium silicide formation: The effect of Mo interlayer, temperature ramp-rate, and annealing atmosphere
- S.-L. Zhang
- C. Lavoie
- et al.
- 1999
- Journal of Applied Physics
Enhanced thermal stability of C49 TiSi2 in the presence of aluminum
- S.-L. Zhang
- F.M. D'Heurle
- et al.
- 1998
- Applied Physics Letters
Boron in polycrystalline SixGe1-x films: Phase diagram and solid solubility
- D. Mangelinck
- P.-E. Hellberg
- et al.
- 1998
- JES
Interdiffusion and phase formation in Cu(Sn) alloy films
- L. Clevenger
- B. Arcot
- et al.
- 1998
- Journal of Applied Physics
Low temperature formation of C54-TiSi2 using titanium alloys
- C. Cabral Jr.
- L. Clevenger
- et al.
- 1997
- Applied Physics Letters
Oxidation of silicon-germanium alloys. I. An experimental study
- P.-E. Hellberg
- S.-L. Zhang
- et al.
- 1997
- Journal of Applied Physics
Oxidation of silicon-germanium alloys. II. A mathematical model
- P.-E. Hellberg
- S.-L. Zhang
- et al.
- 1997
- Journal of Applied Physics
Lowering the formation temperature of the C54-TiSi2 phase using a metallic interfacial layer
- C. Cabral Jr.
- L. Clevenger
- et al.
- 1997
- Journal of Materials Research