III-V heterojunction nanowire tunnel FETs monolithically integrated on silicon
- Kirsten E. Moselund
- D. Cutaia
- et al.
- 2016
- NMDC 2016
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168 results for Heinz Schmid
Ballistic transport and high thermopower in one-dimensional InAs nanowires
- Siegfried Karg
- Vanessa Schaller
- et al.
- 2016
- ESSDERC 2016
Complementary III-V heterostructure tunnel FETs
- Kirsten E. Moselund
- D. Cutaia
- et al.
- 2016
- ESSDERC 2016
Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs
- D. Cutaia
- Heinz Schmid
- et al.
- 2016
- SNW 2016
Complementary III-V heterojunction lateral NW Tunnel FET technology on Si
- D. Cutaia
- Kirsten E. Moselund
- et al.
- 2016
- VLSI Technology 2016
III-V device integration on Si using template-assisted selective epitaxy
- Heinz Schmid
- Mattias Borg
- et al.
- 2015
- DRC 2015
Fabrication and analysis of vertical p-type InAs-Si nanowire tunnel FETs
- D. Cutaia
- Kirsten E. Moselund
- et al.
- 2015
- EUROSOI-ULIS 2015
III-V semiconductor nanowires for future devices
- Heinz Schmid
- Mattias Borg
- et al.
- 2014
- DATE 2014
Heat dissipation and thermometry in nanosystems: When interfaces dominate
- Bernd Gotsmann
- Fabian Menges
- et al.
- 2013
- DRC 2013
Electrical and thermoelectrical properties of gated InAs nanowires
- Philipp Mensch
- Siegfried Karg
- et al.
- 2013
- ESSDERC 2013