Publications

177 results for J. Woodall

High-density optical storage based on nanometer-size arsenic clusters in low-temperature-growth GaAs
- - D.D. Nolte
  - M.R. Melloch
  - et al.
- 1992
- Applied Physics Letters
Surface and interface states for GaAs(100) (1x1) and (4x2)-c(8x2) reconstructions
- - I.M. Vitomirov
  - A. Raisanen
  - et al.
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Photoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces
- - X. Yin
  - H.-M. Chen
  - et al.
- 1991
- Applied Physics Letters
Valence-band-edge shift due to doping in p⁺ GaAs
- - J.A. Silberman
  - T.J. De Lyon
  - et al.
- 1991
- Applied Physics Letters
Low-resistivity p-type ZnSe through surface Fermi level engineering
- - J. Woodall
  - R.T. Hodgson
  - et al.
- 1991
- Applied Physics Letters
High carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAs
- - T.J. De Lyon
  - N.I. Buchan
  - et al.
- 1991
- Applied Physics Letters
High-frequency operation of heavily carbon-doped Ga_0.51In _0.49P/GaAs surface-emitting light-emitting diodes grown by metalorganic molecular beam epitaxy
- - T.J. De Lyon
  - J. Woodall
  - et al.
- 1991
- Applied Physics Letters
Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers
- - Alan C. Warren
  - N. Katzenellenbogen
  - et al.
- 1991
- Applied Physics Letters
Temperature dependence of the photoreflectance of a strained layer (001) In_0.21Ga_0.79As/GaAs single quantum well
- - Y.S. Huang
  - H. Qiang
  - et al.
- 1991
- Journal of Applied Physics
Fermi level pinning at epitaxial Si on GaAs(100) interfaces
- - J.A. Silberman
  - T.J. De Lyon
  - et al.
- 1991
- Applied Physics Letters