Electronic structure of metal/semiconductor interfaces from cathodoluminescence and soft X-ray photoemission spectroscopies
- L.J. Brillson
- I.M. Vitomirov
- et al.
- 1993
- Applied Surface Science
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177 results for J. Woodall
Processing and reconstruction effects on Al-GaAs(100) barrier heights
- I.M. Vitomirov
- A. Raisanen
- et al.
- 1993
- Journal of Electronic Materials
Solubility-limit activation of Si doping at MBE GaAs pn junctions observed by cross-sectional scanning tunneling microscopy
- Peter D. Kirchner
- Andreas Vaterlaus
- et al.
- 1993
- Journal of Crystal Growth
Two-dimensional arsenic-precipitate structures in GaAs
- M.R. Melloch
- C.L. Chang
- et al.
- 1993
- Journal of Crystal Growth
IVA-5 Base Recombination in High Performance InGaAs/InP HBT's
- C.W. Seabury
- C.W. Farley
- et al.
- 1993
- IEEE Transactions on Electron Devices
Structural analysis of as-deposited and annealed low-temperature gallium arsenide
- R.J. Matyi
- M.R. Melloch
- et al.
- 1993
- Journal of Crystal Growth
Effect of semiconductor growth method and bulk doping on fermi level stabilization for aluminum and gold contacts on n- and p-GaAs(100)
- I.M. Vitomirov
- A. Raisanen
- et al.
- 1993
- Journal of Electronic Materials
Comment on arsenic precipitate coarsening in GaAs epilayers
- M.R. Melloch
- K. Mahalingam
- et al.
- 1993
- Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Contactless electromodulation for in situ characterization of semiconductor processing
- X. Yin
- X. Guo
- et al.
- 1993
- Applied Surface Science
InP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped bases and superlattice graded base-collector junctions
- R.C. Gee
- C.L. Lin
- et al.
- 1993
- Electronics Letters