The Germanium Insulated-Gate Field-Effect Transistor (FET)L.L. ChangH.N. Yu1965Proceedings of the IEEEPaper
The conduction properties of GeGaAs1-xPx n-n heterojunctionsL.L. Chang1965Solid-State ElectronicsPaper
The junction depth of concentration-dependent diffusion. Zinc in III-V compoundsL.L. Chang1964Solid-State ElectronicsPaper