A comparison of C54-TiSi2 formation in blanket and submicron gate structures using in situ x-ray diffraction during rapid thermal annealing
- J. Bucchignano
- G.B. Stephenson
- et al.
- 1995
- Journal of Materials Research
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84 results for Lawrence Clevenger
Intermetallic formation in copper/magnesium thin films - Kinetics, nucleation and growth, and effect of interfacial oxygen
- B. Arcot
- S.P. Murarka
- et al.
- 1994
- Journal of Applied Physics
Study of C49-TiSi2 and C54-TiSi2 formation on doped polycrystalline silicon using in situ resistance measurements during annealing
- L. Clevenger
- R. Mann
- et al.
- 1994
- Journal of Applied Physics
In-situ x-ray diffraction and resistivity analysis of CoSi2 phase formation with and without a Ti interlayer at rapid thermal annealing rates
- C. Cabral Jr.
- L. Clevenger
- et al.
- 1994
- MRS Fall Meeting 1994
The C49 to C54 Phase Transformation in TiSi2Thin Films
- L. Clevenger
- R. Mann
- 1994
- JES
Activation energy for C94 and C54 TiSi2 formation measured during rapid thermal annealing
- E.G. Colgan
- L. Clevenger
- et al.
- 1994
- Applied Physics Letters
Crystallization of coevaporated and ion-irradiated amorphous CoSi 2
- Q.Z. Hong
- K. Barmak
- et al.
- 1993
- Journal of Applied Physics
The C49 to C54-TiSi2 transformation in self-aligned silicide applications
- R. Mann
- L. Clevenger
- et al.
- 1993
- Journal of Applied Physics
Comparison of high vacuum and ultra-high-vacuum tantalum diffusion barrier performance against copper penetration
- L. Clevenger
- N.A. Bojarczuk
- et al.
- 1993
- Journal of Applied Physics
Titanium silicides and their technological applications
- L. Clevenger
- R. Mann
- 1993
- MRS Fall Meeting 1993