Characterization of epitaxial (Ca,Ba)F2 films on Si(111) substrates
- M. Wittmer
- D.A. Smith
- et al.
- 1986
- Applied Physics Letters
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60 results for Armin Segmüller
Electron beam evaporation of oriented Nb films onto GaAs crystals in ultrahigh vacuum
- M. Eizenberg
- D.A. Smith
- et al.
- 1986
- Applied Physics Letters
Comment on "Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor-phase epitaxy" (Journal of Applied Physics (1985) 57 (249))
- I.C. Noyan
- Armin Segmüller
- 1986
- Journal of Applied Physics
Effect of the sintering process on the formation and passivation of PtSi
- H.-C.W. Huang
- F.E. Turene
- et al.
- 1986
- JVSTA
Growth of epitaxial films of CdTe and (Cd,Mn)Te on GaAs substrates
- T. Siegrist
- Armin Segmüller
- et al.
- 1986
- Applied Physics Letters
Coverage of Si substrates by self-assembling monolayers and multilayers as measured by IR, wettability and X-ray diffraction
- M. Pomerantz
- A. Segmüller
- et al.
- 1985
- Thin Solid Films
Electronic structure of GaSbAlSb superlattices
- P. Voisin
- C. Delalande
- et al.
- 1985
- Superlattices and Microstructures
Light and heavy valence subband reversal in GaSb-AlSb superlattices
- P. Voisin
- C. Delalande
- et al.
- 1984
- Physical Review B
Ge-GaAs superlattices by molecular beam epitaxy
- Chin-An Chang
- Armin Segmüller
- et al.
- 1981
- Applied Physics Letters
Neutron diffraction from small numbers of Langmuir-Blodgett monolayers of manganese stearate
- R.M. Nicklow
- M. Pomerantz
- et al.
- 1981
- Physical Review B