Properties of epitaxial films of YBa2Cu3O7-
- P. Chaudhari
- R.T. Collins
- et al.
- 1987
- Physical Review B
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60 results for Armin Segmüller
Inhomogeneous lattice distortion in the heteroepitaxy of InAs on GaAs
- H. Munekata
- Armin Segmüller
- et al.
- 1987
- Applied Physics Letters
PtSi contact metallurgy formed by three-temperature annealing sequences and short annealing time
- Chin-An Chang
- Armin Segmüller
- 1987
- Journal of Applied Physics
Characterization of epitaxial films by grazing-incidence X-ray diffraction
- Armin Segmüller
- 1987
- Thin Solid Films
Oriented growth of niobium and molybdenum on GaAs crystals
- M. Eizenberg
- Armin Segmüller
- et al.
- 1987
- Journal of Applied Physics
The microstructure of high-critical current superconducting films
- P. Chaudhari
- F.K. LeGoues
- et al.
- 1987
- Science
Ion induced adhesion via interfacial compounds
- J.E.E. Baglin
- A.G. Schrott
- et al.
- 1987
- Nuclear Inst. and Methods in Physics Research, B
Oriented growth of ultrathin tungsten films on sapphire substrates
- J.H. Souk
- Armin Segmüller
- et al.
- 1987
- Journal of Applied Physics
Electron beam evaporation of oriented Nb films onto GaAs crystals in ultrahigh vacuum
- M. Eizenberg
- D.A. Smith
- et al.
- 1986
- Applied Physics Letters
Comment on "Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor-phase epitaxy" (Journal of Applied Physics (1985) 57 (249))
- I.C. Noyan
- Armin Segmüller
- 1986
- Journal of Applied Physics