Doping-Induced Bandwidth Enhancement in Metal-Semiconductor-Metal Photodetectors
- J.H. Burroughes
- D.L. Rogers
- et al.
- 1991
- IEEE Photonics Technology Letters
Publications
101 results for G.D. Pettit
IIIB-5 High-Transconductance InGaAs/InAlAs SISFET'S
- T.N. Jackson
- P. Solomon
- et al.
- 1991
- IEEE T-ED
Crossover from tunneling to metallic behavior in superconductor- semiconductor contacts
- A.W. Kleinsasser
- T.N. Jackson
- et al.
- 1990
- Applied Physics Letters
Confirmation of the temperature-dependent photovoltaic effect on Fermi-level measurements by photoemission spectroscopy
- S. Chang
- I.M. Vitomirov
- et al.
- 1990
- Physical Review B
Superconducting InGaAs junction field-effect transistors with Nb electrodes
- A.W. Kleinsasser
- T.N. Jackson
- et al.
- 1989
- Applied Physics Letters
Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area
- E.A. Fitzgerald
- G.P. Watson
- et al.
- 1989
- Journal of Applied Physics
InGaAs superconducting JFET's with Nb electrodes
- A.W. Kleinsasser
- T.N. Jackson
- et al.
- 1989
- IEEE T-ED
interface states and Schottky barrier formation at metal/GaAs junctions
- R.E. Viturrc
- C. Mailhiot
- et al.
- 1989
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
VIB-1 InGaAs Superconducting JFET's with Nb Electrodes
- A.W. Kleinsasser
- T.N. Jackson
- et al.
- 1989
- IEEE T-ED
X-ray and Raman studies of MeV ion-bombarded GaInAs/GaAs
- Chu R. Wie
- G. Burns
- et al.
- 1989
- Nuclear Inst. and Methods in Physics Research, B